MT29F2G08ABAGAWP-IT:G, MT29F2G08ABAGAH4-IT:G, MT29F2G08ABBGAH4-IT:G

Part-specific certification as required by China's Management Methods for Controlling Pollution by Electronic Information Products.

Part-specific certification of how this product meets the requirements of the current DIRECTIVE 2011/65/EU and 2015/863/EU, a.k.a. Restriction of Hazardous Substances (RoHS) Directive (Recast) without exemptions.

Company statement regarding REACH SVHC compliance

Rev 2.0, MT29F2G08ABAGAH4-IT:G, MT29F2G08ABAGAWP-IT:G, MT29F2G08ABBGAH4-IT:G, MT29F2G08ABAGAH4-ITE:G, MT29F2G08ABAGAWP-ITE:G, MT29F2G08ABBGAH4-ITE:G, MT29F2G08ABAGAWP-AAT:G

Rev 2.0, MT29F2G08ABAGAH4-IT:G, MT29F2G08ABAGAWP-IT:G, MT29F2G08ABBGAH4-IT:G, MT29F2G08ABAGAH4-ITE:G, MT29F2G08ABAGAWP-ITE:G, MT29F2G08ABBGAH4-ITE:G, MT29F2G08ABAGAWP-AAT:G

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

This technical note describes one-time programmable operations in Micron's 2Gb: x8, x16 NAND Flash memory devices.

This technical note provides guidelines for migrating 1Gb 48nm and 2Gb/4Gb 57nm SLC, large-page NAND Flash memory to 34nm technology (M60A, M69A & M68A)

Explanation of Micron packaging labels and procedures.

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.