Industry-leading density. Industry-unique architecture. The world’s most technologically advanced NAND. Only from Micron.
Micron’s 176-layer NAND serves as an essential and powerful building block in technologists’ toolboxes across a broad array of sectors. Sharpen your competitive edge with:
Replacement-gate architecture combines charge traps with CMOS-under-array (CuA) design
Ideal for mobile, automotive, client, consumer and data center applications while propelling flash adoption in workloads such as data lakes, artificial intelligence and big data analytics
美光的 176 層 NAND 不僅是在工程方面取得突破，更為我們帶來無限自由，讓人們的行事範圍、學習空間及眼界更為廣闊。
Micron recently announced our amazing new 3D flash memory technology, which has an astonishing 176 layers of memory cells stacked on top of each other. This was the perfect excuse for Rebecca Lewington to sit down with Micron Senior Fellow Mark Helm to talk about how this achievement made the journey from idea to volume production – “from lab to fab,” as we say.
Flash memory used to be built in two dimensions. But a few years ago, we bumped up against the laws of physics and couldn't add capacity by making the memory cells smaller. So, we started adding capacity by building upwards.
By reducing cell-to-cell capacitive coupling issues and mitigating resistance with a metal control gate, Micron’s replacement-gate (RG) NAND is part of a cutting-edge, high-capacity data storage system providing fast, smooth and superior performance.