176-Layer NAND Flash Memory

Micron’s leadership 176-layer 3D NAND is a critical foundation for end-to-end storage technology innovation.

176 Layers of Innovation

Micron’s 176-layer NAND serves as an essential and powerful building block in technologists’ toolboxes across a broad array of sectors. Sharpen your competitive edge with:

Unique Technology

Replacement-gate architecture combines charge traps with CMOS-under-array (CuA) design

Broad Applications and Deployment Options

Wide selection of interfaces, capacities, form factors, and TLC or QLC provide ideal options for mobile, automotive, client, consumer and data center applications.

176 Layers: Innovation from Client to Cloud

The Micron 2400 SSD with NVMe™ is the world’s first 176-layer PCIe Gen4 QLC SSD. The 2400 brings industry-leading storage densities to enable flexible OEM solution designs.

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搭載 NVMe 的美光 7450 SSD 是全球最先進的 176 層 NAND 資料中心 SSD，提供優異的延遲效能和 PCIe Gen4，以及廣泛的部署選項。

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Physical differences between current NAND and RG NAND

Micron Transitions to Next-Generation - 3D NAND Replacement-Gate Technology

By reducing cell-to-cell capacitive coupling issues and mitigating resistance with a metal control gate, Micron’s replacement-gate (RG) NAND is part of a cutting-edge, high-capacity data storage system providing fast, smooth and superior performance.

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