MT41K128M8 – 16 Meg x 8 x 8 banks, MT41K64M16 – 8 Meg x 16 x 8 banks

Version 2.3 (for die rev. J); V88A; MT41K64M16TW-107 AUT:J

Version 2.1 (for die rev. J); V88A; MT41K64M16TW-107 AUT:J

1.74

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

Describes bypass capacitor selection for high-speed designs.

Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life

Explanation of Micron packaging labels and procedures.

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.