Micron Is Where
Innovation Thrives

憑藉世界級的製造工藝,美光正在開拓世界最先進的 1-alpha (1α) DRAM 和 176 層 3D NAND 技術,幫助全球企業將數據轉化為洞察,從而獲得競爭優勢。
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Learn how data drives today’s economy.

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Turning process technology leadership to leading products across all markets

Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.

  • 1α DRAM — 40% higher memory density1 for feeding data-hungry workloads and expanding AI deployments
  • 176-layer 3D NAND — 35% improved read and write latency2 for accelerating application performance
  • 176-layer 3D NAND — 33% faster data transfer rates3 for faster server system bootup and application performance

Learn more about Micron's data center solutions

Learn how the rise of AI is creating innovation and growth across the data center.

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1 40% improvement in memory density when compared to Micron's previous 1z DRAM node.

2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

3 33% improvement when compared to Micron’s prior two generations of 3D NAND (96-layer NAND and 128-layer NAND), which featured a maximum of 1,200 MT/s data transfer rates.

 

Micron’s high-bandwidth, low-power memory and storage provide a critical data foundation for the intelligent edge.

  • 1α DRAM — The promise of industry-leading reliability, ruggedness and longevity for safety-critical embedded, automotive and industrial solutions
  • 176-layer 3D NAND — Future delivery of 1,600 MT/s data transfer rates for near instant-on response times for in-vehicle systems
  • 176-layer 3D NAND — Future delivery of 35% improved read latency and write latency1 will ease bottlenecks in AI industrial edge devices

Learn more about Micron's edge solutions for automotive

Learn how digital transformation is driving brilliant new automotive features.

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1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.

  • 1α low-power DRAM — 15% improved power savings1, allowing 5G mobile users to perform more tasks without sacrificing battery life
  • 176-layer 3D NAND — 15% faster mixed workload performance2 for ultra-fast mobile computing, enhanced AI inference, and graphic-rich, real-time multiplayer gaming
  • Multichip packages (MCPs) — High-performance, high-density, low-power memory and storage in a single compact package, enabling smartphones to handle data-intensive 5G workloads with greater speed and energy efficiency

Learn more about Micron's mobile solutions

1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.

2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.

Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, agility and security.

  • 1α low-power DRAM — 15% improved power savings1, enabling high-performance computing in small notebook form factors without sacrificing battery life
  • Micron PCIe Gen4 SSDs — PCIe Gen4 for data-intensive applications and flexible form factors for cutting-edge designs

Learn more about Micron's client solutions

Learn more about Micron’s new Client SSDs

Learn about the PC innovations providing new life to the devices we use for working, learning and playing.

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1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM.

 

Check out some of Micron's partners discussing how memory and storage collaboration propels customer opportunity

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Industry's first 1α DRAM technology

Micron's 1α node is the world's most advanced DRAM process technology, bringing greater reliability, higher memory density, improved power savings and best-in-class performance for applications across data center, automotive, intelligent edge, mobile and more. This technology also provides a solid foundation for future Micron product and memory innovations.

Discover 1α technology

Micron Delivers Industry’s First 1α DRAM Technology

1α 窺秘 — 世界最先進的 DRAM 製程技術

Thy Tran on Micron’s 1-Alpha DRAM Process Technology

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Breakthrough 176-layer technology

The most technologically advanced NAND node in the market, Micron's industry-first 176-layer 3D NAND improves both read latency and write latency by over 35%1 and provides 15% faster mixed workload performance2, enabling greater application performance across storage use cases spanning data center, intelligent edge and mobile devices.

Discover 176-layer NAND

Micron Ships World’s First 176-Layer NAND, Delivering A Breakthrough in Flash Memory Performance and Density

Micron Transitions to Next-generation 3D NAND Replacement Gate Technology

1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. When compared to 128-layer replacement-gate NAND, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.

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Micron announces memory and storage innovations at Computex 2021

Micron president and CEO, Sanjay Mehrotra, unveiled new memory and storage innovations based on the company's industry-leading 176-layer NAND and 1α (1-alpha) DRAM technology, and introduced the industry’s first Universal Flash Storage (UFS) 3.1 solution for automotive applications. These newest entrants to Micron’s product portfolio deliver on Micron’s vision of accelerating data-driven insights through innovation.

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