Micron Mobile TLC 3D NAND Flash Memory

Today’s mobile devices are smarter than ever. Recent innovations are enabling entirely new ways of interacting with smartphones, including advanced user authentication, AR, language recognition and more personalized imaging capabilities. These user experiences are made possible by artificial intelligence (AI) engines embedded inside of today’s smartphones.

But these AI engines aren’t useful unless they’re fed with really fast local data.

美光的創新 64 層三層單元(TLC)3D NAND 技術提供了現代智慧型手機所需的速度和效能,擁有超大儲存容量和極速表現。



High-Capacity Storage
64-layer TLC 3D NAND technology with CMOS under Array technology doubles the storage density of previous generation TLC 3D NAND while maintaining the same package size.  


Industry-Leading Write Performance
Micron’s new 64L TLC 3D NAND products are 50% faster than previous generation TLC 3D NAND.

UFS 2.1 High-Speed Gear 3 Interface
Delivers 200% higher bandwidth versus e.MMC 5.1; uses Command Queue technology to read and write commands simultaneously.


Micron’s unique floating gate technology provides superior data retention2 compared to charge trap gates used by competitors


Power Efficiency
Our TLC 3D NAND uses a peak power management system to significantly reduce the memory peak power consumption in smartphones.

Floating gate technology uses isolated charge storage nodes for superior cell-to-cell charge isolation, delivering higher data retention and reliability.

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