RLDRAM 記憶體

Our reduced-latency DRAM (RLDRAM® memory) is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth. RLDRAM 創新的電路設計，盡可能地縮短了存取週期從開始到第一個資料可以使用之間的時間差。這些特色讓 RLDRAM 成為 10GbE、40GbE、100GbE 資料包緩衝和檢測的首選，它也支援多項 FPGA 和網路處理器解決方案。

容量

Select Density
  • 288Mb
  • 576Mb
  • 1.125Gb
Range: 288Mb - 1.125Gb
  • 技術
    RLDRAM 2
  • Width
    x9, x18, x36
  • Voltage
    1.8V
  • 封裝
    FBGA, uBGA
  • Op. Temp.
    0C to +95C, -40C to +95C
  • 技術
    RLDRAM 2
  • Width
    x18, x36
  • Voltage
    1.8V
  • 封裝
    FBGA, uBGA
  • Op. Temp.
    0C to +95C, -40C to +95C
  • 技術
    RLDRAM 3
  • Width
    x18, x36
  • Voltage
    1.35V
  • 封裝
    BGA, FBGA
  • Op. Temp.
    0C to +95C, -40C to +95C
RLDRAM Memory Catalogs
View 288Mb Part Catalog View 288Mb RLDRAM Memory Part Catalog
View Full Catalog View Full RLDRAM Memory Part Catalog
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