Our reduced-latency DRAM (RLDRAM® memory) is a high-performance, high-density memory solution that offers fast SRAM-like random access and outpaces even leading-edge DDR3 for sustained high bandwidth. RLDRAM 創新的電路設計，盡可能地縮短了存取週期從開始到第一個資料可以使用之間的時間差。這些特色讓 RLDRAM 成為 10GbE、40GbE、100GbE 資料包緩衝和檢測的首選，它也支援多項 FPGA 和網路處理器解決方案。
Learn how Micron RLDRAM 3 delivers next-generation performance for your networks.
A system designer can use this model to accurately approximate the power requirements of RLDRAM 3 in a system environment
