MT53E256M16D1DS-046 AAT

Orderable parts

MT53E256M16D1DS-046 AAT:B

Specs

  • Chipset Validation
    不適用
  • Cycle Time
  • Data Rate
    4266Mbps
  • 容量
    4Gb
  • FBGA 編號
    D9XFV
  • Op. Temp.
    -40C to +105C
  • Part Status
    Production
  • 產品長期供貨計畫
    No
  • Product Longevity Program Start Date
    不適用
  • 技術
    LPDDR4
  • Width
    x16

REACH Statement

Company statement regarding REACH SVHC compliance
  • File Type: (PDF)
  • Updated: 12/1/2021

Simulation Models

HSPICE: 4Gb LPDDR4 Z00M

WT, UT, AT, IT, XT, Z00M Mobile LPDDR4 SDRAM, Die Rev. B
  • File Type: ZIP
  • Updated: 2020-08-20

IBIS: 4Gb Mobile LPDDR4 Z00M

WT, UT, AT, IT, XT, Z00M Mobile LPDDR4 SDRAM, Die Rev. B, 366b 8DP, 200b SDP, 200b DDP, 376b QDP
  • File Type: ZIP
  • Updated: 2020-08-20

技術說明文件

TN-00-08: Thermal Applications

This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.
  • File Type: PDF
  • Updated: 2021-11-16

TN-46-22: T69M (50nm) to T79M (4xnm) Transition Guide

Transition guide for migration from T69M to T79M
  • File Type: PDF
  • Updated: 2016-06-24
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Customer Service Notes

CSN-16: Micron Component and Module Packaging

Explanation of Micron packaging labels and procedures.
  • File Type: PDF
  • Updated: 2020-10-13

CSN-24: ESD Precautions for Die/Wafer Handling and Assembly

Describes the benefits of controlling ESD in the workplace, including higher yields and improved quality and reliability, resulting in reduced manufacturing costs.
  • File Type: PDF
  • Updated: 2010-08-05
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