Micron Technology Enables Rich, Data-Driven Experiences Everywhere

People and enterprises need to stay consistently ahead of the incredible growth of their data. Micron's next-generation 1β (1-beta) DRAM and 232-layer 3D NAND, along with leading-edge current-generation 1α (1-alpha) DRAM and 176-layer NAND, enable organizations around the globe to unleash incredibly rich data experiences and unbridled productivity.  
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1β DRAM Technology

Micron is shipping the industry’s first DRAM manufactured on next-generation 1-beta process technology. It represents state-of-the-art innovation from Micron’s continued investment in R&D and process technology advancement. Micron’s 1-beta process technology allows development of memory products with increased performance, greater capacity, higher density, and lower relative power consumption than prior generations.

Discover 1β Technology


Podcast: DRAM process leadership: 1-beta LPDDR5X is on the way to market


前有首創 Alpha,後繼首創 Beta:全球首款 1-Beta DRAM 出貨中

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232-Layer 3D NAND Technology

Micron’s leadership 232-layer 3D NAND provides the foundation for a new wave of end-to-end technology innovation. 憑藉這業界首創的 232 層全新技術,美光達成業界最佳的儲存裝置密度、更強大的性能與業界最快的I/O速度。這將為用戶端、行動電話與資料中心市場的數位化、優化與自動化帶來更多新的商機。

Discover 232-Layer NAND


美光開始出貨全球首款 232 層 NAND,藉此擴大技術領先優勢

美光的 232 層 NAND : 新一波端到端創新的基礎


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Process technology leadership: The basis for innovative products for all industries

Micron delivers the foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.

  • 1α DRAM — 40% higher memory density1 for nourishing data-hungry workloads and expanding AI deployments.
  • 232-layer 3D NAND — New six-plane internal architecture improves Quality of Service (QoS) for busy data center workloads through parallelism that minimizes the number of collisions between read and write commands.

Learn more about Micron's data center solutions 

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1 40% improvement in memory density when compared to Micron's previous 1z DRAM node

Micron’s high-bandwidth, low-power memory and storage provide a critical data foundation for the intelligent edge.

  • 1α DRAM — The promise of industry-leading reliability, ruggedness and longevity for safety-critical embedded, automotive and industrial solutions.
  • 232-layer 3D NAND — Enable performance for the edge with next-generation 232-layer NAND, providing up to 100% higher write bandwidth and greater than 75% higher read bandwidth than previous-generation NAND.1

Learn more about Micron's edge solutions for automotive

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Watch video for Micron's edge solution on smart devices

1 When compared to Micron’s high-volume 176-layer TLC NAND

Micron's high-performance, high-capacity, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled smartphones.

  • Next-generation 1β low-power DRAM — improved performance and new power savings featuresallow advanced smartphone users to perform more tasks without sacrificing battery life.
  • 232-layer NAND storage capacity reaches up to 1 terabit per die, with a 28% smaller package than previous-generationsempowering mobile content creators to capture and share stunning photos and videos.

Learn more about Micron's mobile solutions

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Compared to the previous 1α generation of Micron mobile DRAM

28% smaller compared to Micron 176-layer NAND parts or equal storage capacity

Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, agility and security.

  • Micron high performance DDR5 DRAM – with the performance and bandwidth needed by latest-generation multi-core CPUs.
  • 1α low-power DRAM — 15% improved power savings,enabling high-performance computing in small notebook form factors without sacrificing battery life.
  • 232-layer NAND allows huge storage capacity — up to 1 terabit per die— enabling significantly increased overall storage capacity for the broad spectrum of SSDs to suit various client form factors.

Learn more about Micron's client solutions
Learn more about Micron’s new client SSDs

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1 15% power savings when compared to the previous 1z generation of Micron mobile DRAM





Industry leaders share insights on emerging technologies and data-driven customer experiences.


AI, 5G, and IT: Key drivers for digital transformation

Linda Tsai discusses Advantech Industrial IoT solutions and collaboration with Micron to provide the trusted quality for innovative industrial applications.

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Advancing technologies for the next-generation data center

Robert Hormuth of AMD highlights the need for memory and storage advancement to meet growing data center requirements.

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Enabling exceptional smartphone user experiences

JC Hsu shares how customer focus and close collaboration with mobile ecosystem partners including Micron lead to innovation and superior customer experiences.

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Enabling safer streets with AI and network-based vision

Bruno Fernandez Ruiz describes how Nexar gathers the inputs from millions of autos and applies edge-based AI to enable innovations in safety and smart transportation.

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Advancing 3D vision through advanced software

Jake Hillard shows how Red Leader's edge computing platform is transforming 3D image sensing with 10x higher resolution, programmability and scale.

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Taiwan and leadership in the worldwide semiconductor industry

Global, pervasive experiences require an innovative ecosystem, in which Micron and Taiwan both play critical roles.

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News from Computex 2022

Micron Ventures Fund II Commits $200M for Deep Tech Startups

Micron’s venture capital team, Micron Ventures, will be investing $200M in deep tech startups with its Fund II. Building on the success of the initial AI Fund, Micron’s Fund II will target broader deep tech innovations.
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Micron’s New Crucial NVMe SSDs Offer Fast, Affordable Options to Consumers

Micron announced the forthcoming availability of two new consumer storage products, the Crucial® P3 Plus Gen4 NVMe™ and Crucial® P3 NVMe™ solid-state drives (SSDs), as an expansion of its award-winning Crucial NVMe SSD product portfolio.
深入閱讀


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