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NAND flash

176-layer NAND flash memory

Micron’s leadership in 176-layer 3D NAND is a critical foundation for end-to-end storage technology innovation.

176 layers of innovation

Micron’s 176-layer NAND serves as an essential and powerful building block in technologists’ toolboxes across a broad array of sectors. Sharpen your competitive edge with these benefits:

Unique technology

Replacement-gate architecture combines charge traps with CMOS-under-array (CuA) design.

Enhanced performance

25% faster read and write times1 mean quicker booting and increased application responsiveness.

Broad applications and deployment options

Wide selection of interfaces, capacities, form factors, and TLC or QLC provide ideal options for mobile, automotive, client, consumer and data center applications.

176 layers: Innovation from client to cloud

Micron transitions to next-generation 3D NAND replacement-gate technology

By reducing cell-to-cell capacitive coupling issues and mitigating resistance with a metal control gate, Micron’s replacement-gate (RG) NAND is part of a cutting-edge, high-capacity data storage system providing fast, smooth and superior performance.

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Physical differences between current NAND and RG NAND

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Blue and purple technology circuit

1. Comparison is based on Micron’s 128-layer replacement-gate NAND.

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