3D XPoint™ 技術

Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.

The initial technology stores 128Gb per die across two stacked memory layers. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.

Memory cells are written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity and reducing cost.

With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technologies today.