3D XPoint™ 技術

Turn immense amounts of data into valuable insights — in real time. With up to 1,000X lower latency and exponentially greater endurance than NAND, 3D XPoint™ technology delivers game-changing performance for big data applications and transactional workloads.

Breakthrough Nonvolatile Memory Technology

The explosion of connected devices and digital services is generating massive amounts of new data. For this data to be useful, it must be stored and analyzed very quickly. 3D XPoint™ technology is an entirely new class of nonvolatile memory that can help turn immense amounts of data into valuable information in real time. 相較於 NAND,3D XPoint 技術延遲低達一千倍,耐久性與日俱增,為大數據應用及交易工作負載量提供顛覆業界的效能表現。Its ability to enable high-speed, high-capacity data storage close to the processor creates new possibilities for system architects and promises to enable entirely new applications.

3D XPoint Memory Innovations

Cross Point Array Structure

Perpendicular conductors connect 128 billion densely packed memory cells. Each memory cell stores a single bit of data. This compact structure results in high performance and high density.


The initial technology stores 128Gb per die across two stacked memory layers. Future generations of this technology can increase the number of memory layers and/or use traditional lithographic pitch scaling to increase die capacity.


Memory cells are written or read by varying the amount of voltage sent to each selector. This eliminates the need for transistors, increasing capacity and reducing cost.

Fast Switching Cell

With a small cell size, fast switching selector, low-latency cross point array, and fast write algorithm, the cell is able to switch states faster than any existing nonvolatile memory technologies today.

HSE: 異質性記憶體儲存引擎

Opening up storage performance in an open source world.

Get started developing at www.github.com/hse-project or optimize MongoDB for flash and SCM with HSE.
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